Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO<sub>2</sub> nanorod-array patterned sapphire template

C. H. Chiu; C. C. Lin; C. H. Wang; S. P. Chang; C. Y. Jang; Z. Y. Li; H. C. Yang; H. C. Kuo; T. C. Lu; S. C. Wang

doi:https://doi.org/10.7567/SSDM.2011.P-7-3

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template

C. H. Chiu¹, C. C. Lin¹, C. H. Wang¹, S. P. Chang^1,2, C. Y. Jang¹, Z. Y. Li¹, H. C. Yang², H. C. Kuo¹, T. C. Lu¹, S. C. Wang¹ (1.National Chiao Tung Univ., 2.Epistar Co., Ltd. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-7-3

2011 International Conference on Solid State Devices and Materials

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template