Elucidating the electrical characteristics of an inversion domain boundary in p-type GaN of light-emitting diodes

Y. S. Wang; M. C. Hsieh; J. F. Chen; J. B. Huang; N. C. Chen

doi:https://doi.org/10.7567/SSDM.2011.P-7-5

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-7-5] Elucidating the electrical characteristics of an inversion domain boundary in p-type GaN of light-emitting diodes

Y. S. Wang¹、M. C. Hsieh¹、J. F. Chen¹、J. B. Huang²、N. C. Chen³ (1.National Chiao Tung Univ.、2.National Taiwan Univ. of Sci. and Tech.、3.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-7-5

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