The Japan Society of Applied Physics

[B-5-4L] Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure

S. Maikap1、W. Banerjee1、B. L. You1、D. Jana1、H. Y. Lee2、W. S. Chen2、F. T. Chen2、M. J. Kao2、M. J. Tsai2 (1.Chang Gung Univ.、2.Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-5-4L