[B-5-4L] Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure

S. Maikap¹、W. Banerjee¹、B. L. You¹、D. Jana¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-5-4L