Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel

L. J. Liu; K. S. Chang Liao; C. H. Fu; H. C. Hsieh; C. C. Lu; T. K. Wang; P. Y. Gu; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2012.D-1-3

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[D-1-3] Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel

L. J. Liu¹、K. S. Chang Liao¹、C. H. Fu¹、H. C. Hsieh¹、C. C. Lu¹、T. K. Wang¹、P. Y. Gu²、M. J. Tsai² (1.National Tsing Hua Univ.、2.Indus. Tech. Res. Inst. , Taiwan, R.O.C.)

https://doi.org/10.7567/SSDM.2012.D-1-3

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