[D-4-3] High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization

W. Takeuchi¹、N. Taoka¹、M. Kurosawa^1,2、M. Fukutome¹、M. Sakashita¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ.、2.JSPS , Japan)

https://doi.org/10.7567/SSDM.2012.D-4-3