[D-7-2] W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes

A. Veloso¹, S. A. Chew¹, T. Schram¹, H. Dekkers¹, A. Van Ammel¹, T. Witters¹, H. Tielens¹, N. Heylen¹, K. Devriendt¹, F. Sebaai¹, S. Brus¹, L. A. Ragnarsson¹, L. Pantisano¹, G. Eneman¹, L. Carbonell¹, O. Richard¹, 1P. Favia¹, 1J. Geypen¹, 1H. Bender¹, 1Y. Higuchi², 2A. Phatak³, 3A. Thean¹, 1N. Horiguchi¹ (1.IMEC , Belgium, 2.Panasonic , Japan, 3.Applied Materials Belgium NV , Belgium)

https://doi.org/10.7567/SSDM.2012.D-7-2