[L-1-4] Effects of Trap Energy Levels on Reverse Recovery Surge of Silicon Power Diode

S. Machida¹、Y. Yamashita¹、T. Misumi²、T. Sugimaya¹ (1.Toyota Central R&D Labs. Inc.、2.Toyota Motor Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.L-1-4