[L-1-5] Compact Modeling of Floating-Base Effect in IGBT Based on Potential Modification by Accumulated Charge

T. Yamamoto¹, M. Miyake², M. Miura Mattaush² (1.DENSO Corp., 2.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.L-1-5