[PS-1-17L] Low-Temperature Formation of High-Quality Oxide for MOSFETs on Flexible Substrates

H. Hasegawa¹、Y. Iijima¹、K. Adachi¹、S. Nozaki¹、K. Uchida¹ (1.Univ. of Electro-Communications , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-17L