Current Enhancement of Green Transistors as Compare to Conventional Tunnel FETs with Dopant Segregated Process

M. H. Lee; J. C. Lin; C. Y. Kao; C. W. Chen; J. D. Luo; Y. J. Lee; G. L. Luo

doi:https://doi.org/10.7567/SSDM.2012.PS-3-1

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-3-1] Current Enhancement of Green Transistors as Compare to Conventional Tunnel FETs with Dopant Segregated Process

M. H. Lee¹、J. C. Lin¹、C. Y. Kao¹、C. W. Chen²、J. D. Luo¹、Y. J. Lee³、G. L. Luo³ (1.National Taiwan Normal Univ.、2.National Cheng Kung Univ.、3.National Nano Device Lab. , TAIWAN)

https://doi.org/10.7567/SSDM.2012.PS-3-1

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