[A-2-5] Fluorine ion implantation optimization in Saddle-Fin array devices for sub-40-nm DRAM technology

K.L. Chiang^1,2, W.P. Lee^1,2, C.C. Lee¹, C.S. Sung¹, C.K. Wei^1,2, C.M. Yang^1,2, J.C. Wang², P. Kao¹, C.Y. Lee², H.H. Chen¹, C.Y. Hsiao¹, C.S. Lai² (1.Chang Gung Univ., 2.Inotera Memories Inc. (Taiwan))

https://doi.org/10.7567/SSDM.2013.A-2-5