[C-3-5L] Floating-Gated Memory Based on Carbon Nanotube Field-Effect Transistors with Si Floating Dots

K. Seike¹、Y. Ohno¹、K. Maehashi¹、K. Inoue¹、K. Matsumoto¹ (1.ISIR. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.C-3-5L