Comparison of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) and Bulk SRAM Cells

T. Mizutani; Y. Yamamoto; H. Makiyama; H. Shinohara; T. Iwamatsu; H. Oda; N. Sugii; T. Hiramoto

doi:https://doi.org/10.7567/SSDM.2013.D-6-4

[D-6-4] Comparison of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) and Bulk SRAM Cells

T. Mizutani¹、Y. Yamamoto²、H. Makiyama²、H. Shinohara²、T. Iwamatsu²、H. Oda²、N. Sugii²、T. Hiramoto¹ (1.Univ. of Tokyo、2.Low-power Electronics Association & Project (LEAP) (Japan))

https://doi.org/10.7567/SSDM.2013.D-6-4

2013 International Conference on Solid State Devices and Materials

[D-6-4] Comparison of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) and Bulk SRAM Cells