[J-3-1] Scaling to 100nm Channel Length of Crystalline In-Ga-Zn-Oxide Thin Film Transistors with Extremely Low Off-State Current

Y. Kobayashi¹、S. Matsuda¹、D. Matsubayashi¹、H. Suzawa¹、M. Sakakura¹、K. Hanaoka¹、Y. Okazaki¹、T. Yamamoto¹、S. Hondo¹、T. Hamada¹、S. Sasagawa¹、M. Nagai¹、Y. Hata¹、T. Maruyama¹、Y. Yamamoto¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.J-3-1