[J-6-2] Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode T. Narita1、Y. Fujimoto1、A. Wakejima1、T. Egawa1 (1.Nagoya Inst. of Tech. (Japan)) https://doi.org/10.7567/SSDM.2013.J-6-2