The Japan Society of Applied Physics

[PS-10-4] Device performance of top-gate organic transistors with embedded electrodes:Effects of thin and planar C8 -BTBT layer on FET characteristics

Y. Kimura1、T. Nagase1,2、T. Kobayashi1,2、K. Takimiya3、M. Ikeda4、H. Naito1,2 (1.Univ. of Osaka Prefecture、2.The Res. Inst. for Molecular Electronic Devices (RIMED),Osaka Prefecture University、3.Univ. of Hiroshima、4.Nippon Kayaku Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-10-4