[K-5-4] Air-Band Optical Cavity in Si Photonic Crystal Waveguides for Biosensing Applications

K. Hirai¹、T. Araki¹、J. Cai¹、K. Wada¹、Y. Ishikawa¹、K. Hayashi²、T. Horiuchi²、Y. Iwasaki²、Y. Ueno²、E. Tamechika³ (1.Univ. of Tokyo、2.Labs. of NTT MI、3.Corp. of NTT AT (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-5] Design of a three-dimensional photonic crystal nanocavity based on a <110>-layered diamond structure

T. Tajiri¹、S. Takahashi²、A. Tandaechanurat²、S. Iwamoto^1,2、Y. Arakawa^1,2 (1.Institute of Industrial Science、2.Institute of Nano Quantum Information Electronics (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-1] A figure of merit based transmitter link penalty calculation for plasma-dispersion electro-optic Mach-Zehnder modulators

D.M. Gill¹、W..M.J. Green¹、S. Assefa¹、J.C. Rosenberg¹、T. Barwicz¹、S.M. Shank²、Y.A. Vlasov¹ (1.IBM T. J. Watson Res. Center、2.IBM Systems & Tech. Group, Microelectronics Division (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-2] Low-Tuning-Power, Wavelength-Selectable Silicon Hybrid Laser for WDM Transmitter

S. Tanaka^1,2,3、S.H. Jeong^1,3、T. Akiyama^1,2,3、S. Sekiguchi^1,2,3、T. Kurahashi^1,2,3、Y. Tanaka^1,2,3、K. Morito^1,2,3 (1.PETRA、2.Fujitsu Laboratories Ltd.、3.Fujitsu Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-3] Enhanced Electroluminescence from Germanium Waveguides by Local Tensile Strain with Silicon Nitride Stressors

K. Tani^1,2,3、K. Oda^1,2,3、T. Okumura^1,2,3、T. Takezaki³、J. Kasai^1,2,3、T. Mine³、T. Ido^1,2,3 (1.Photonics Electronics Tech. Res. Association、2.Inst. for Photonics-Electronics Convergence System Tech.、3.Hitachi, Ltd. (Japan))

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[K-6-4] Resonant Photoluminescence from Microdisk Based on N-Doped, Tensile-Strained Ge on Si

X. Xu¹、K. Nishida¹、K. Sawano¹、T. Maruizumi¹、Y. Shiraki¹ (1.Tokyo City Univ. (Japan))

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[K-6-5] Si-V luminescent center formation in nanocrystal diamond by atomic Si induced diamond nucleation

H. Isshiki¹、Y. Souma¹、T. Shigeeda¹、S. Takigawa¹、K. Matsushima¹ (1.Univ. of Electro-communications (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-6L] Highly-stabilized Operation of Si Photonics Wavelength Tunable Laser Diode

T. Kita¹、K. Nemoto¹、H. Yamada¹ (1.Tohoku Univ. (Japan))

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[M-2-1] Power Device Trends for High- Power Density Operation of Power Electronics System

W. Saito¹ (1.Toshiba Corp. (Japan))

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[M-2-2] 600 V-class Trench-Filling Super Junction MOSFET for High precision processing technology

Y. Oda¹、T. Yamamoto¹、K. Eguchi¹、Y. Kagata¹ (1.Denso Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード