High Mobility Ultrathin GeSn (111) pMOSFETs by Solid Phase Epitaxy

T. Maeda; W. Jevasuwan; H. Hattori; N. Uchida; S. Miura; M. Tanaka; J.P. Locquet; R. Lieten

doi:https://doi.org/10.7567/SSDM.2014.PS-1-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-1] High Mobility Ultrathin GeSn (111) pMOSFETs by Solid Phase Epitaxy

T. Maeda¹、W. Jevasuwan¹、H. Hattori¹、N. Uchida¹、S. Miura²、M. Tanaka²、J.P. Locquet³、R. Lieten^3,4,5 (1.AIST、2.Yokohama National Univ.、3.KU Leuven、4.IMEC、5.Entegris (Japan))

https://doi.org/10.7567/SSDM.2014.PS-1-1

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