High Mobility Ultrathin GeSn (111) pMOSFETs by Solid Phase Epitaxy

T. Maeda; W. Jevasuwan; H. Hattori; N. Uchida; S. Miura; M. Tanaka; J.P. Locquet; R. Lieten

doi:https://doi.org/10.7567/SSDM.2014.PS-1-1

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-1] High Mobility Ultrathin GeSn (111) pMOSFETs by Solid Phase Epitaxy

T. Maeda¹, W. Jevasuwan¹, H. Hattori¹, N. Uchida¹, S. Miura², M. Tanaka², J.P. Locquet³, R. Lieten^3,4,5 (1.AIST, 2.Yokohama National Univ., 3.KU Leuven, 4.IMEC, 5.Entegris (Japan))

https://doi.org/10.7567/SSDM.2014.PS-1-1

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