[PS-3-11] New Concept of Planar Germanium MOSFET with Stacked Germanide Layers at Source/Drain

H. Xu¹、L. Sun¹、Y.–B. Zhang¹、Y.–Q. Xia¹、J.–W. Han¹、Y. Wang¹、S.–D. Zhang¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-3-11