[PS-3-4] Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

T.–H. Kao¹、S.–L. Wu²、C.–Y. Wu²、Y.–K. Fang¹、P.–C. Huang¹、C.–M. Lai³、C.–W. Hsu³、Y.–W. Chen³、O. Cheng³、S.–J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-3-4