[PS-6-6] Reduction of Initial Threshold Voltage Shift in ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs on Si Substrates by Post-deposition Annealing

T. Kubo¹、J. Freedsman¹、Y. Yoshida¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-6-6