A self-aligned Ge/SiO2/Si0.4Ge0.6 gate-stacking heterostructure generated in a single fabrication step

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

W.-T. Lai¹、K.-C. Yang¹、T.-C. Hsu¹、P.-H. Liao¹、T. George²、P.-W. Li¹ (1.National Central Univ.、2.Private Consultant (Taiwan))