A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the "BOX Creep" Technique

A. Bonnevialle

doi:https://doi.org/10.7567/SSDM.2015.N-2-3

16:45 〜 17:05

[N-2-3] A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the "BOX Creep" Technique

A. Bonnevialle^1,2, C. Le Royer², Y. Morand¹, S. Reboh², J. M. Pedini¹, A. Roule², D. Marseilhan², P. Besson¹, D. Rouchon², N. Bernier², C. Tabone², C. Plantier², ^○L. Grenouillet², VinetM. ² (1.STMicroelectronics, 2.CEA-LETI(France))

https://doi.org/10.7567/SSDM.2015.N-2-3

2015 International Conference on Solid State Devices and Materials

[N-2-3] A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the "BOX Creep" Technique