14:50 〜 15:10

[A-1-04] Impacts of Device Design and Variability on 6T/8T SRAM Cells with MoS₂-n/WSe₂-p MOSFETs for 5.9nm node

^○C. Yu¹, P. Su¹, C. Chuang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.A-1-04