10:00 〜 10:15

[N-3-02] Unpassivated AlGaN/GaN HEMTs with Ideal Sub-threshold Swing (~60mV/decade) on Extremely High Quality Free-standing GaN Substrate

^○X. Liu¹, H. Gu¹, K. Li¹, J. He¹, K. Lai¹, D. Zhu¹, Y. Lu¹, W. He¹, J. Fang², J. Wang³, H. -C. Kuo⁴, Z. Liu⁵, W. Liu⁶, K. -W. Ang⁵, Y. Hao², K. Xu³, J. -P. Ao^1,2 (1.Shenzhen Univ (China), 2.Xidian Univ. (China), 3.SINANO, CAS (China), 4.National Chiao Tung Univ. (Taiwan), 5.National Univ. of Singapore (Singapore), 6.Fudan Univ. (China))

https://doi.org/10.7567/SSDM.2017.N-3-02