Effect of GaN Drift-Layer Thicknesses in Vertical Schottky Barrier Diodes on Free-Standing GaN Substrates

A. Sandupatla

doi:https://doi.org/10.7567/SSDM.2018.D-1-02

14:30 〜 14:45

[D-1-02] Effect of GaN Drift-Layer Thicknesses in Vertical Schottky Barrier Diodes on Free-Standing GaN Substrates

^○A. Sandupatla¹, S. Arulkumaran^2,3, G.I. Ng^1,2, K. Ranjan^1,2, M. Deki³, S. Nitta³, H. Amano³ (1.School of EEE, Nanyang Technological Univ. (Singapore), 2.Temasek Labs., Nanyang Technological Univ. (Singapore), 3.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-1-02

2018 International Conference on Solid State Devices and Materials

[D-1-02] Effect of GaN Drift-Layer Thicknesses in Vertical Schottky Barrier Diodes on Free-Standing GaN Substrates