Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.

T.J. Haffner

doi:https://doi.org/10.7567/SSDM.2019.D-5-03

09:45 〜 10:00

[D-5-03] Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.

^○T.J. Haffner¹, F. Bassani¹, P. Gentile², N. Pauc², E. Martinez³, T. Baron¹, E. Robin⁴, S. David¹, B. Salem¹ (1.CEA/LETI/DCOS/LTM (France), 2.CEA/INAC-Pheliqs (France), 3.CEA/LETI/DTSI (France), 4.CEA/INAC-MEM (France))

https://doi.org/10.7567/SSDM.2019.D-5-03

2019 International Conference on Solid State Devices and Materials

[D-5-03] Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.