85% Endurance Error Reduction by Changing Reset Voltage in 40nm TaO<sub>X</sub>-based ReRAM

15:15 〜 15:30

[H-1-05] 85% Endurance Error Reduction by Changing Reset Voltage in 40nm TaO_X-based ReRAM

^○H. Kinoshita¹, S. Fukuyama¹, T. Yonai¹, R. Yasuhara², K. Takeuchi¹ (1.Chuo Univ. (Japan), 2.Panasonic Semiconductor Solutions Co., Ltd. (Japan))