Demonstration of 1200 V / 1.4 mΩ cm<sup>2</sup> Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process

R. Tanaka

doi:https://doi.org/10.7567/SSDM.2019.K-1-02

14:30 〜 14:45

[K-1-02] Demonstration of 1200 V / 1.4 mΩ cm² Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process

^○R. Tanaka¹, S. Takashima¹, K. Ueno¹, H. Matsuyama¹, Y. Fukushima¹, M. Edo¹, K. Nakagawa² (1.Fuji Electric Co., Ltd. (Japan), 2.Univ. of Yamanashi (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-02

2019 International Conference on Solid State Devices and Materials

[K-1-02] Demonstration of 1200 V / 1.4 mΩ cm2 Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process

[K-1-02] Demonstration of 1200 V / 1.4 mΩ cm² Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process