Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap

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[PS-1-05] Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap

^○S.R. Kola¹, Y. Li¹, N. Thoti¹, C.-Y. Chen¹, W.-L. Sung¹ (1.National Chiao Tung Univ. (Taiwan))