Polycrystalline Silicon MOSFET-based Multi-Layer Capacitorless DRAM (1T-DRAM) for the Embedded System

W.D. Jang

doi:https://doi.org/10.7567/SSDM.2019.PS-2-10

1:00 PM - 3:00 PM

[PS-2-10] Polycrystalline Silicon MOSFET-based Multi-Layer Capacitorless DRAM (1T-DRAM) for the Embedded System

^○W.D. Jang¹, Y.J. Yoon², M.S. Cho¹, J.H. Jung¹, S.H. Lee¹, J. Jang¹, J.-H. Bae¹, I.M. Kang¹ (1.Kyungpook National Univ. (Korea), 2.Korea Inst. of Sci. and Tech. (Korea))

https://doi.org/10.7567/SSDM.2019.PS-2-10

2019 International Conference on Solid State Devices and Materials

[PS-2-10] Polycrystalline Silicon MOSFET-based Multi-Layer Capacitorless DRAM (1T-DRAM) for the Embedded System