"Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

Eiji Kagoshima, Wakana Takeuchi, Katsuhiro Kutsuki, Mitsuo Sakashita, Hirokazu Fujiwara, Osamu Nakatsuka

doi:https://doi.org/10.7567/SSDM.2021.D-4-04

11:29 AM - 11:36 AM

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

〇Eiji Kagoshima¹, Wakana Takeuchi², Katsuhiro Kutsuki³, Mitsuo Sakashita⁴, Hirokazu Fujiwara¹, Osamu Nakatsuka^4,5 (1.MIRISE Technologies Corp., 2.Aichi Institute of Tech., 3.TOYOTA CENTRAL R&D LABS., Inc., 4.Graduate School of Eng., Nagoya Univ., 5.Inst. of Materials and Systems for Sustainability, Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-4-04

2021 International Conference on Solid State Devices and Materials

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"