15:30 〜 15:45
▲ [15p-503-7] Growth rate dependent near ideal vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates
キーワード：GaN
GaN has attracted much attention for their potential applications in power electronic devices, benefitting from its superior properties, such as wide band gap, high electron mobility, large breakdown field and high thermal conductivity. A vertical structure is believed to be more suitable for high-power applications than lateral devices since high current and voltage can be achieved simultaneously with reduced on-resistance and less effect from surface/interface states. Compared to PN junction diodes, the Schottky Barrier diodes (SBDs) are expected to achieve both low on-resistance and turn-on voltages since they do not have minority carrier storage issue and have higher electron mobility. To obtain high-performance power electronics, carbon incorporation during MOCVD growth is an important issue. Although there is a few investigations on the carbon doping in SBDs, a proper doping level and how to control the growth parameter is still unclear.
In this study, we detailed investigate the effect from growth rates of the GaN drift layer on free-standing GaN substrate by changing the TMG flow rates.
In this study, we detailed investigate the effect from growth rates of the GaN drift layer on free-standing GaN substrate by changing the TMG flow rates.