15:30 〜 15:45 ▲ [15p-503-7] Growth rate dependent near ideal vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates 〇SANG Li-wen1、Ren Bing1、Liao Meiyong1、角谷 正友1、小出 康夫1 (1.物材研)