[18p-212B-1~11] 【CS.8】 7.4 量子ビーム界面構造計測, 9.5 新機能材料・新物性のコードシェアセッション

[18p-212B-3] Time-resolved X-ray diffraction setup for in-situ observation of thin film growth

〇Wolfgang Voegeli¹、Masamitu Takahasi^2,3、Takuo Sasaki²、Seiji Fujikawa²、Tetsuroh Shirasawa⁴、Etsuo Arakawa¹、Toshio Takahashi¹ (1.Tokyo Gakugei Univ.、2.QST、3.Univ. of Hyogo、4.AIST)

キーワード：time-resolved X-ray diffraction, semiconductor thin film growth

A new setup for time-resolved X-ray diffraction during thin film growth is presented. Time resolutions in the millisecond range can be attained. In measurements during the MBE growth of InGaAs on GaAs(001), the thin film structure and interface roughness during the transition from strained to relaxed growth was observed.