2021年第68回応用物理学会春季学術講演会

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6 薄膜・表面 » 6.3 酸化物エレクトロニクス

[19p-Z14-1~18] 6.3 酸化物エレクトロニクス

2021年3月19日(金) 13:30 〜 18:15 Z14 (Z14)

神吉 輝夫(阪大)

15:15 〜 15:30

[19p-Z14-8] Investigation of impact of orientation on electronic properties in epitaxially grown MoO2 films

Shuxin Zhang1、Takuto Soma1、Akira Ohtomo1,2 (1.Tokyo Tech.、2.MCES)

キーワード:epitaxial growth, thin film, rutile

The structural instability of rutile compounds has been investigated intensively to reveal correlations between structural and electronic phase transitions, as represented by a metal-insulator transition in VO2. Recent discovery of superconductivity in strained rutile-type RuO2 films further draws interests of lattice engineering for exploring exotic properties. In order to investigate impact of lattice strain on phase instability, orientation control is a starting point. In this study, we focus on MoO2 with distorted rutile-type structure. The epitaxial growth and transport properties of MoO2 with various orientations are reported.