The Japan Society of Applied Physics

[C-2-4] Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient

Hokyung Park、Hyundoek Yang、Hyunjun Sim、Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2003.C-2-4