The Japan Society of Applied Physics

[D-2-6] Impact of NiSi Thermal Instability on Junction Shallowing Characterized with Damage-free n+/p Silicon Diodes

Masakatsu Tsuchiaki、Kazuya Ohuchi、Chie Hongo (1.Corporate Research & Development Center, Toshiba Corporation.、2.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.D-2-6