Effect of Surface Energy of Gate Insulators on Polymer Field-Effect Transistor Performance

K. Tomatsu; A. Kanehara; H. Uda; T. Hamada; T. Nagase; T. Kobayashi; S. Murakami; M. Watanabe; K. Matsukawa; H. Naito

doi:https://doi.org/10.7567/SSDM.2008.P-10-8

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-10-8] Effect of Surface Energy of Gate Insulators on Polymer Field-Effect Transistor Performance

K. Tomatsu¹、A. Kanehara¹、H. Uda¹、T. Hamada¹、T. Nagase¹、T. Kobayashi¹、S. Murakami²、M. Watanabe³、K. Matsukawa³、H. Naito¹ (1.Osaka Prefecture Univ.、2.Tech. Res. Inst. of Osaka Prefecture、3.Osaka Municipal Technical Res. Inst., Japan)

https://doi.org/10.7567/SSDM.2008.P-10-8

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