The Japan Society of Applied Physics

10:10 〜 10:30

[E-6-4] Novel Integration of Ultra-thin Al2O3 with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

L. Zhang1,2, H. Y. Li1, Y. Shang2, W. Yoo3, H. Yu2, C. S. Tan2 (1.Institute of Microelectronics, A*STAR, 2.Nanyang Technological Univ., 3.WaferMasters, Inc(Singapore))

https://doi.org/10.7567/SSDM.2015.E-6-4