[PB2-4] Low Damage Magnetron Enhanced Reactive Ion Etching

Masayuki SATO, Daisuke KIMURA, Nobuyuki TAKENAKA, Shigeo ONISHI, Keizo SAKIYAMA, Tohru HARA (1.VLSI Development Laboratories, IC-Group, SHARP Corporation, 2.Department of Electrical Engineering, Hosei University)

https://doi.org/10.7567/SSDM.1991.PB2-4