[A-0-1] The Evolution of Semiconductor Quantum Structures Do-It-Yourself Quantum Mechanics

Leo Esaki (1.IBM Thomas J. Watson Research Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-0-2] Defects in Semiconductors

George D. Watkins (1.Department of Physics 16 Lehigh University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-0-3] Opto-Electronic Devices --What's Missing--

Tetsuhiko Ikegami (1.NTT Opto-electronics Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] Hot Carrier Effects in nMOSFET at 77 K and 300 K

Toyoji YAMAMOTO, Yasushi NISHIMURA, Takahiro IIZUKA Hiroshi MATSUMOTO, Masao FUKUMA (1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp., 2.NEC Scientific Information System Development Corp.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] PMOSFET Hot-Carrier Degradation Analyzed Over Ten Orders of Magnitude

R. Woltjer, A. Hamada, E. Takeda (1.Philips Research Laboratories, 2.Central Research Laboratory, Hitachi Ltd)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Spatial Distribution of Trapped Holes in the Oxide of MOSFETs after Uniform Hot-Hole Injection

QUAZI Deen Mohd Khosru, Naoki YASUDA, Akinori MARUYAMA, Kenji TANIGUCHI, Chihiro HAMAGUCHI (1.Department of Electronic Engineering, Osaka University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] The Influence of Synchrotron X-Ray Damage on Hot-Carrier-Induced Degradation in Subquarter-Micron NMOSFETs

T. Tsuchiya, M. Harada, K. Deguchi, T. Matsuda (1.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] A Study of Hot-Carrier-Effects in SOI-MOSFETs Using Photon Emission

Takami Makino, Seiichiro Kawamura (1.ULSI R&D Division, FUJITSU LIMITED)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases

T. Morimoto, H. S. Momose, M. Tsuchiaki, Y. Ozawa, K. Yamabe, H. Iwai (1.ULSI Research Center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] A Comparative Study of High-Field Endurance for Reoxidized-Nitrided and Fluorinated Oxides

Z. H. Liu, P. Nee, P. K. Ko, C. Hu, C. G. Sodini, B. J. Gross, T. P. Ma, Y. C. Cheng (1.Department of EECS, University of California, 2.Department of EECS, Massachusetts Institute of Technology, 3.Department of Electrical Engineering, Yale University, 4.Directorate, City Polytechnic of Hong Kong)

1991 International Conference on Solid State Devices and Materials |PDF Download