[PC5-10] Low Temperature Operation of Polycrystalline Silicon Thin Film Transistors

H. Mori, K. Hata, T. Hashimoto, I-Wei Wu, A. G. Lewis, M. Koyanagi (1.Research Center for Integrated Systems, Hiroshima University, 2.Palo Alto Research Center, Xerox Co.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-11] A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs

N. Kato, S. Yamada, Y. Nishihara, M. Fuse, T. Hamano (1.Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-12] Threshold Voltage Shift of a-Si TFTs during Pulse Operation

Ryoji Oritsuki, Toshikazu Horii, Akira Sasano, Ken Tsutsui, Toshiko Koizumi, Yoshiyuki Kaneko, Toshihisa Tsukada (1.Mobara Works, Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd., 3.Musashino Works, Hitachi Device, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-13] C-MOS Self-Aligned Low Temperature Poly-Si TFTs Fabricated by Laser Annealing of Poly-Si Films

Tsutomu HASHIZUME, Satoshi INOUE, Takashi INAMI, Takashi NAKAZAWA, Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION TFT Research Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-14] A Study of Poly-Si TFT LCD with Very Small Pixel Size and High Aperture Ratio

T. Shimada, T. Ueda, Y. Takafuji, H. Komiya (1.LCD Group, SHARP Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-15] Low Temperature Poly-Si TFTs Using Solid Phase Crystallization (SPC) of Very Thin Films and an ECR-CVD Gate Insulator

Thomas W. LITTLE, Ken-ichi TAKAHARA, Hideki KOIKE, Takashi NAKAZAWA, Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION TFT Research Laboratory)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-16] Design Considerations for Noncrossing TFT Matrix with Reduced DC Level Shift

Tatsuya Kakehi, Ken-ichi Yanai, Tsutomu Tanaka, Takayuki Hoshiya Kouji Ohgata, Ken-ichi Oki, Masahiro Okabe (1.FUJITSU LIMITED)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC5-17] Display Performance Improvement of TFD-LCD by Low Temperature Anodizing Method

K. Sunohara, H. Morita, S. Kamagami, M. Watanabe, Y. Abe, T. Iizuka (1.Electron Device Engineering Laboratory, Toshiba Corporation, 2.Toshiba Electronic Engineering. Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC6-1] Analytical Temperature-Rise Model for SOI MOSFETs

Naoki YASUDA, Kenji TANIGUCHI, Chihiro HAMAGUCHI Yasuo YAMAGUCHI, Tadashi NISHIMURA (1.Department of Electronic Engineering, Osaka University, 2.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PC6-2] Hot Carrier Reliability of Submicron Ultra Thin SOI-MOSFET's

Yasuo YAMAGUCHI, Masahiro SHIMIZU, Yasuo INOUE, Tadashi NISHIMURA, Yoichi AKASAKA (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download