[S-D-2] Preparation of TiN Films by ECR Plasma CVD

Takashi Akahori, Akira Tanihara (1.Research and Development Division, Electronics Division, Sumitomo Metal Industries, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-3] Conformal and Low Temperature W-CVD by SiH2F2 Reduction

Hidekazu Goto, Nobuyoshi Kobayashi, Yoshio Homma (1.Central Research Laboratory, Hitachi, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-4] High Performance Copper Metallization for ULSI Interconnects

Masahito OTSUKI, Toshiyuki TAKEWAKI, Hideshi KUWABARA, Tadashi SHIBATA, Tadahiro OHMI, Takahisa NITTA (1.Department of Electronics, Tohoku University, 2.Device Development Center, Hitachi Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-5] Ferroelectric PZT Thin Films for ULSI Memory Applications

Norman Abt, Michael Brassington, Robert Broze (1.National Semiconductor Corporation Fairchild Research Center)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-6] Formation of PZT Films by MOCVD

K. Kashihara, H. Itoh, K. Tsukamoto, Y. Akasaka (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-7] Single-Target Sputtering Process for PZT Thin Films with Precise Composition Control

Kazuyoshi Torii, Toru Kaga, Keiko Kushida, Hiroshi Takeuchi, Eiji Takeda (1.Central Research Lab., Hitachi Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-8] Effect of Oxygen Addition on Structure and Current Conduction Mechanism of Amorphous and Crystallized Extremely Thin CVD-Ta2O5 Films

Hiroshi Shinriki, Masahiko Hiratani, Asao Nakao, Shinichi Tachi (1.Central Research Laboratory, Hitachi Ltd., 2.Production Engineering research Laboratory, Hitachi, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[S-D-9] High Fluidity CVD of Silicon Oxide from SiH4 + O2 Plasma

H. Shin, H. Ichihashi, S. Miyazaki, M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB1-1] Electrical Properties of PLZT Thin Films Prepared by a Sol-Gel Method

T. Okudaira, A. Hachisuka, N. Soyama, K. Ogi, H. Arima, T. Matsukawa, K. Horie (1.Mitsubishi Electric Corp. LSI Lab., 2.Mitsubishi Electric Corp. Kitaitami Works, 3.Mitsubishi Material Corp. Central Research Institute)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB1-2] Structure and Properties of Silicon Titanium Oxide Films Prepared by Plasma CVD Method

Takeshi KAMADA, Masatoshi KITAGAWA, Munehiro SHIBUYA, Takashi HIRAO (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (61 - 70)

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