[PB1-3] Contact Plug Formed with Chemical-Vapour-Deposited TiN

K. Mori, M. Akazawa, M. Iwasaki, H. Ito, K. Tsukamoto, Y. Akasaka (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB1-4] Mechanism of Lowering TiW/Si Contact Resistivity by Post Annealing Process

Masayuki SUZUKI, Ryo HARUTA, Yasuko YOSHIDA, Yoshihiko KOIKE, Tokio KATO (1.Semiconductor Design and Development Center, Hitachi, Ltd., 2.Hitachi Research Laboratory, Hitachi, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB1-5] Surface and Gas-Phase Reactions in Selective Tungsten CVD as a Function of the SiH4/WF6 ratio

Yoshitaka Nakamura, Nobuyoshi Kobayashi, Hidekazu Goto, Yoshio Homma (1.Central Research Laboratory, Hitachi, Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB2-1] BF2+ Ion Implantation into Very Low Temperature Si Wafer

M. Takakura, T. Kinoshita, T. Uranishi, S. Miyazaki, M. Koyanagi, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Integrated Systems, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB2-3] Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

George FERENCZI, Tibor PAVELKA, Peter TUTTO (1.SEMILAB Semiconductor Physics Laboratory Rt)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB2-4] Low Damage Magnetron Enhanced Reactive Ion Etching

Masayuki SATO, Daisuke KIMURA, Nobuyuki TAKENAKA, Shigeo ONISHI, Keizo SAKIYAMA, Tohru HARA (1.VLSI Development Laboratories, IC-Group, SHARP Corporation, 2.Department of Electrical Engineering, Hosei University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB3-1] Generation Current Reduction at LOCOS Isolation Edge by Low Temperature Hydrogen Annealing

Mikihiro KIMURA, Kaoru MOTONAMI, Yasuhiko ONODERA (1.LSI Lab., Mitsubishi Electric Corp.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB3-2] Hot Carrier Effect of AC Stress on P-MOSFETs

S. Shimizu, S. Kusunoki, M. Inuishi, K. Tsukamoto, Y. Akasaka (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB3-3] Cross Sectional Local Stress Distribution for Trench Isolation

Mamoru Tomozane, Barbara Vasquez, Teruki Ikeda (1.Motorola, Inc., 2.Japan Spectroscopic Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[PB3-4] Role of SiN Bond Formed by N2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO2 Films

Makoto YASUDA, Hisashi FUKUDA, Toshiyuki IWABUCHI, Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (71 - 80)

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