[D-2-4] 630nm Wavelength GaInP/AlInP Multi-Quantum Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GSMBE)

Akihiko KIKUCHI, Yawara KANEKO, Katsumi KISHINO (1.Dept. of Electrical and Electronics Engineering, Sophia University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Optical Bistable Devices by Charge-Induced Self-Feedback: Switching Time and Spatial Resolution

George Hayashi, Yoshifumi Yamaoka, Syuji Kodama, Masamichi Yamanishi, Yong Lee, Ikuo Suemune (1.Department of Physical Electronics, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] In-Situ Observation of Electromigration in Cu Film with Scanning μ-RHEED Microscope

Kazuya Masu, Yohei Hiura, Kazuo Tsubouchi, Tadahiro Ohmi, Nobuo Mikoshiba (1.Research Institute of Electrical Communication, Tohoku University, 2.Department of Electronics, Faculty of Engineering, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field

S. Takehiro, N. Yamanaka, A. Narai, H. Shindo, S. Shingubara, Y. Horiike (1.Department of Electrical Engineering, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Deposition of Polycrystalline Silicon by Rapid Thermal CVD and Its Application to Direct Contact to TiSi2

T. Yamaguchi, H. Itoh, T. Katayama, K. Tsukamoto, Y. Akasaka (1.LSI Laboratory, Mitsubishi Electric Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] A New Cleaning Method by Using Anhydrous HF/CH3OH Vapor System

A. Izumi, T. Matsuka, T. Takeuchi, A. Yamano (1.DAINIPPON SCREEN MFG. CO. LTD Development Department 2)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Breakthrough in Semiconducting SiC towards Solid State Devices

H. Matsunami (1.Department of Electrical Engineering, Kyoto University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Selective Epitaxial Growth of Silicon and Germanium at Low Temperatures Using Ultraclean CVD Processing

Junichi MUROTA, Manabu KATO, Nobuo MIKOSHIBA, Shoichi ONO (1.Research Institute of Electrical Communication, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si(100)

A. Buxbaum, M. Eizenberg, A. Raizman, F. Schaffler (1.Dept. of Materials Engineering and Solid State Institute, Technion, 2.Soreq Nuclear Research Center, 3.Daimler - Benz AG, Forschungsinstitut Ulm)

1991 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition

Masao SAKURABA, Junichi MUROTA, Nobuo MIKOSHIBA, Shoichi ONO (1.Research Institute of Electrical Communication, Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF Download