[PC7-L4] Fabrication of Sub-100 nm Wires in GaAs/AlGaAs Multiquantum Well by Focused Ion Beam Lithography

H. Arimoto, H. Kitada, A. Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto (1.FUJITSU LABORATORIES LTD.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-1] High-Efficiency InGaAlP Green Light-Emitting Diodes

H. Sugawara, K. Itaya, H. Nozaki, G. Hatakoshi (1.Research and Development Center, Toshiba Corporation, 2.Semiconductor Division, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-2] Low Threshold Current InGaAs/InGaAlAs MQW Lasers Grown by Gas Source Molecular Beam Epitaxy

Y. Kawamura, A. Wakatsuki, Y. Noguchi, H. Iwamura (1.NTT Opto-electronics Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-3] Fabrication of InGaAsP/InP Gain-Coupled Distributed Feedback Laser

T. Inoue, S. Nakajima, T. Oki, H. Iwaoka, Y. Nakano, K. Tada (1.Optical Measurement Technology Development Co., Ltd., 2.Department of Electronic Engineering University of Tokyo)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-4] Photonic Memory Operation of an Exciton Absorptive Reflection Switch

Shinji Matsuo, Chikara Amano, Takashi Kurokawa (1.NTT Opto-electronics Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-5] Symmetric P-n-P InAlAs/InGaAs Double Heterojunction Bipolar Transistor's Fabricated with Si-ion Implantation

Atsushi Nakagawa, Kaoru Inoue (1.Semiconductor Research Center, Matsushita Electric Industrial Co., LTD)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-6] A HEMT 64 K SRAM Grown by MOVPE

J. Komeno (1.Fujitsu Laboratories Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-7] A Quantum Flux Parametron (QFP) Based 12-bit Shift Register Capable of Microwave Operation

J. Casas, R. Kamikawai, N. Miyamoto, E. Goto (1.Research Development Corp. of Japan (JRDC))

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-8] A Novel Atomic-Layer Epitaxy (TM-ALE) Method of Silicon

Shigeru IMAI, Satoru TAKAGI, Osamu SUGIURA, Masakiyo MATSUMURA (1.Department of Physical Electronics, Tokyo Institute of Technology)

1991 International Conference on Solid State Devices and Materials |PDF Download

[LD-8-9] Single Crystal Growth of Al(110) on Si(100) by Ultra-High-Vacuum Sputtering System

S. Yokoyama, K. Okamoto (1.Research Center for Integrated Systems, Hiroshima University, 2.Faculty of Engineering, Hiroshima University)

1991 International Conference on Solid State Devices and Materials |PDF Download

262 results (251 - 260)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Next »

▲