[A-2-1] Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases

T. Morimoto, H. S. Momose, M. Tsuchiaki, Y. Ozawa, K. Yamabe, H. Iwai (1.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.A-2-1